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DTSTART;TZID=Europe/Paris:20260311T140000
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DTSTAMP:20260617T122627
CREATED:20260213T091226Z
LAST-MODIFIED:20260227T150926Z
UID:10000064-1773237600-1773244800@sfp-alpes.fr
SUMMARY:Soutenance de Thèse de Subham SENAPATI (IRIG / Spintec)
DESCRIPTION:Spin-orbit torque based magnetic memories evaluation for cryogenic applications\nRésumé : \nThe rapid development of cryogenic computing platforms\, including superconducting electronics\, quantum information processors\, high-performance computing systems\, and space applications\, has created a demand for memory technologies that operate efficiently\, reliably\, and scalable at low temperatures. While magnetic random-access memory (MRAM) is a mature and commercially deployed non-volatile memory at room temperature\, its behaviour and limitations at cryogenic temperatures remain insufficiently explored\, particularly for three-terminal spin-orbit torque magnetic tunnel junctions (SOT-MTJs). This thesis presents a comprehensive experimental and modelling study of SOT-based magnetic memories operated from room temperature (300 K) down to liquid-helium (4 K) temperatures. A dedicated cryogenic characterisation framework is developed to extract magnetic parameters\, quantify switching statistics\, and evaluate write performance under both quasi-static and sub-nanosecond pulsed conditions. Temperature-dependent measurements reveal enhanced magnetic anisotropy and thermal stability at low temperatures\, accompanied by non-trivial trends in critical switching current. By combining experiments with micromagnetic simulations incorporating temperature-dependent material properties and transient Joule heating\, this work demonstrates that self-heating remains a dominant factor during write operations\, especially at cryogenic bath temperatures. Beyond conventional SOT-MRAM\, complementary approaches including optimised spin-transfer torque devices and voltage-gate-assisted SOT switching are investigated. They show that controlling retention via storage layer thickness is a relevant strategy to decrease write current while electric-field control of anisotropy enables efficient modulation of switching across a large temperature range. Overall\, this thesis establishes both the physical limitations and technological potential of SOT- and voltage-gated SOT-based MRAM as viable candidates for future cryogenic memory systems. \nhttps://www.cea.fr/drf/irig/Pages/Animation-scientifique/theses/2026_Senapati.aspx \nContact : admin.spintec@cea.fr
URL:https://sfp-alpes.fr/event/soutenance-de-these-de-subham-senapati-irig-spintec/
LOCATION:CEA – Salle de Séminaire IRIG (1005 – 445)\, Laboratoire Irig/Spintec\, salle de séminaire 445\, bâtiment 1005\, CEA-Grenoble\, Grenoble
CATEGORIES:Soutenance,Soutenance de Thèse
ORGANIZER;CN="IRIG - CEA":MAILTO:odile.rossignol@cea.fr
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