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DTSTART;TZID=Europe/Paris:20260928T133000
DTEND;TZID=Europe/Paris:20260928T153000
DTSTAMP:20260910T152347Z
CREATED:20260910T152315Z
LAST-MODIFIED:20260910T152347Z
UID:10000247-1790602200-1790609400@sfp-alpes.fr
SUMMARY:Soutenance de Thèse par Andy SEGURET
DESCRIPTION:Croissance épitaxiale d’oxyde de gallium par dépôt de couches atomiques et épitaxie par jets moléculaires\nRésumé : \nUltra-wide bandgap semiconductors such as diamond\, AlN and Ga2O3 are emerging as strong contenders to beat the limits of current power electronics\, based on SiC and GaN. Ga2O3 is particularly interesting\, with its 4.9 eV bandgap\, high (> 8 MV/cm) breakdown electric field and large Baliga’s figure of merit. The growth of Ga2O3 using atomic layer deposition (ALD) and molecular beam epitaxy (MBE) remain largely unexplored\, and present interesting potential. On the one hand\, ALD\, as a self-limiting growth method\, enables sub-nm thickness control and excellent conformality\, on both flat and high-aspect-ratio structures\, making it particularly suitable for ultra-thin layers and interface engineering\, while using a low thermal budget. On the other hand\, MBE provides highly controlled growth under ultra-high vacuum conditions\, allowing for abrupt interfaces\, precise control of composition and doping\, and detailed in-situ monitoring of growth processes\, making it particularly well suited for the growth of heterostructures. In this context\, the Ga2O3/AlN heterojunction was identified as a particular target of these studies. This thesis is a contribution the development of Ga2O3-based devices for power electronics\, through the exploration of the deposition of Ga2O3 thin films by ALD and MBE. The fabrication of efficient devices requires high-quality thin films in order to ensure carrier mobility. With this purpose\, we developed processes for both ALD and MBE in order to optimise the deposition of Ga2O3 thin films. The research carried out in this work was strongly focused on the optimisation of the growth conditions\, in order to improve the films’ crystalline quality. \nFirst\, an ALD process using TEGa and O3 is designed\, yielding a growth rate of 0.42 ± 0.02 Å/cycle\, with an ALD window found between 250 and 400 °C. The growth of high-crystalline quality\, epitaxial (001) κ-Ga2O3 thin films on c-plane sapphire is then achieved for ultra-thin films (< 20 nm)\, and the epitaxial relationships between film and substrate are established as [001] κ-Ga2O3 || [0001] α-Al2O3\, [010] κ-Ga2O3 || [10-10] α-Al2O3 and [100] κ-Ga2O3 || [11-20] α-Al2O3. The growth mechanisms enabling the formation of the metastable κ-Ga2O3 phase are discussed. The effects of an increasing thickness on the crystalline structure of the films are then investigated by increasing the number of ALD cycles. Finally\, the Ga2O3 ALD layers are annealed and undergo phase transition to (-201) β-Ga2O3. \nIn the scope of assessing the feasibility of an AlN/Ga2O3 heterojunction\, we studied the MBE growth of AlN on Ga2O3. The nucleation of Al-polar AlN is optimised under N-rich conditions\, which result in high-quality layers with a sharp monoclinic-to-wurtzite transition. The epitaxial relationships are identified as [0001] AlN || ⟂ (-201) β-Ga2O3 and [2-1-10] AlN || [020] β-Ga2O3\, with an interface consisting of two monolayers of AlGaN. The challenging MBE growth of Ga2O3 is then investigated on AlN. The growth of single-phase (-201) β-Ga2O3 is achieved for temperatures above 630 °C\, and optimal structural properties are obtained for relatively low gallium fluxes. The epitaxial relationship identified as [020] β-Ga2O3 || <11-20> AlN\, with three rotational domains. As in the case of AlN on β-Ga2O3\, the interface is crystallographically sharp\, but it contains two AlGaN monolayers. \nThese results demonstrate the potential of ALD and MBE as growth techniques for future ultra-wide-bandgap power electronics\, and represent an important step towards the integration of Ga₂O₃ into advanced heterostructures. \n_ \nContact : deborah.verger@grenoble-inp.fr
URL:https://sfp-alpes.fr/event/soutenance-de-these-de-andy-seguret/
LOCATION:Phelma\, Amphi M001\, 3\, parvis Louis Néel\, Grenoble\, 38000\, France
CATEGORIES:Soutenance,Soutenance de Thèse
ORGANIZER;CN="LMGP":MAILTO:deborah.verger@grenoble-inp.fr
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BEGIN:VEVENT
DTSTART;TZID=Europe/Paris:20260930T093000
DTEND;TZID=Europe/Paris:20260930T113000
DTSTAMP:20260911T092146Z
CREATED:20260911T092146Z
LAST-MODIFIED:20260911T092146Z
UID:10000249-1790760600-1790767800@sfp-alpes.fr
SUMMARY:Soutenance de Thèse par Liam JOHNSTON
DESCRIPTION:Enabling and Modelling Alternative Precursors and Processes Using Spatial Atomic Layer Deposition (SALD)\nRésumé : \nAtomic layer deposition (ALD) and its spatial variant (SALD) allow for the conformal coating of any geometry with atomic-scale precision\, leading to applications in nanotechnology\, microelectronics\, and optoelectronics. These techniques commonly use pyrophoric compounds\, which react violently with air\, complexifying deposition and transport. However\, the intrinsically higher deposition rate in SALD could allow the study of precursors which are less dangerous\, more efficient\, and/or more eco-friendly without compromising productivity compared with an ALD process using a pyrophoric precursor. To this end\, Zn(DMP)2 8and Ga(DMP)Me2 are studied as non-pyrophoric precursors for the deposition of zinc and gallium-containing oxides\, while a general fundamental model is proposed for SALD and compared to numerical simulations. \n_ \nContact : deborah.verger@grenoble-inp.fr
URL:https://sfp-alpes.fr/event/soutenance-de-these-par-liam-johnston/
LOCATION:Phelma – Room M255 (2nd floor)\, 3\, parvis Louis Néel\, Grenoble\, 38000\, France
CATEGORIES:Soutenance,Soutenance de Thèse
ORGANIZER;CN="LMGP":MAILTO:deborah.verger@grenoble-inp.fr
END:VEVENT
BEGIN:VEVENT
DTSTART;TZID=Europe/Paris:20260930T140000
DTEND;TZID=Europe/Paris:20260930T160000
DTSTAMP:20260910T153213Z
CREATED:20260903T151558Z
LAST-MODIFIED:20260910T153213Z
UID:10000236-1790776800-1790784000@sfp-alpes.fr
SUMMARY:Soutenance de Thèse par Jamie SILK
DESCRIPTION:Development and Optimization of a Sustainable Passive Atmospheric Water Harvesting Device\nRésumé : \nWater is essential for human life\, yet roughly two billion people worldwide still lack access to safely managed drinking water. With increasing pressure from rapid population growth and climate change\, there is a critical need for water generation technologies that are low-cost\, scalable\, and environmentally sustainable. Passive atmospheric water harvesting offers a promising solution by capturing moisture from the air without continuous energy input\, but current approaches are often limited by low efficiency or high cost. \nThis study aims to optimize a bioinspired mixed-wettability surface to enhance passive water collection by promoting both droplet nucleation and rapid transport of condensed water. The surface is fabricated using superhydrophobic zinc oxide nanowire (ZnO NW) arrays synthesized via a scalable sol-gel/chemical bath deposition method\, followed by functionalization with a non-fluorinated silane agent. Here\, we propose a novel “double-structured” ZnO NW array with hierarchical surface roughness. This novel morphology is assessed for its superhydrophobic property and benchmarked against other ZnO NW morphologies. Hydrophilic silica nanoparticles are then deposited on the superhydrophobic NW arrays to create the mixed wettability effect for water harvesting. Material performance is optimized by varying NW morphology\, surface wettability\, and nanoparticle concentration to maximize water collection rates and the stability of the material is tested over time to monitor for any degradation in performance. \nTo induce condensation without energy input\, this mixed-wettability surface is coupled with a passive daytime radiative cooling (PDRC) coating composed of bicontinuous interfacially jammed emulsion gels (bijels). Bijels are formed through the kinetic arrest of spinodal decomposition of two immiscible liquids by jamming nanoparticles at the liquid-liquid interface. These porous polymer films exhibit high solar reflectance and strong infrared emissivity which enables sub-ambient cooling by using cold outer space as a heat sink. The PDRC layer is optimized by adjusting the domain size and film thickness to achieve maximum cooling performance. In parallel\, a life cycle assessment (LCA) is conducted to evaluate the environmental impacts of material fabrication and identify key contributors to categories such as global warming potential\, water use\, and ozone depletion. This integrated approach informs design choices that minimize environmental burden. The results of this study show promise in developing a sustainable material with the ability to passively collect atmospheric water\, potentially aiding in providing clean water globally in the face of the climate crisis. \n_ \nContact : deborah.verger@grenoble-inp.fr
URL:https://sfp-alpes.fr/event/soutenance-de-these-de-jamie-silk/
LOCATION:Phelma Minatec\, A102\, 3\, parvis Louis Néel\, Grenoble\, 38000\, France
CATEGORIES:Soutenance,Soutenance de Thèse
ORGANIZER;CN="LMGP":MAILTO:deborah.verger@grenoble-inp.fr
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